The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Aug. 26, 1992
Edouard D de Fresart, Tempe, AZ (US);
John W Steele, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A bipolar transistor (10) is formed by using low temperature epitaxial deposition in order to form a base layer (14) of the transistor (10). A dielectric (16, 17, 18) is applied to the base layer (14) and an emitter opening (21) having sloping sidewalls is formed in the dielectric (16, 17, 18). Low temperature epitaxial deposition is also used for forming an emitter (24) within the emitter opening (21). The emitter opening (21) forms sloping sidewalls on the emitter (24) thereby forming an emitter overhang that overlies the base layer (14). The width (26) of the emitter overhang determines an extrinsic base width of the transistor (10).