The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1994
Filed:
Aug. 31, 1990
Bertrand F Cambou, Mesa, AZ (US);
H Ming Liaw, Scottsdale, AZ (US);
Mamoru Tomozane, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A non-silicon substrate is bonded to a silicon substrate with a stress-relief layer between the non-silicon substrate and the silicon substrate. The stress-relief layer reduces the stress between the non-silicon substrate and the silicon substrate. The stress is created by the difference in the thermal expansion coefficients of the two materials. The stress-relief layer may be a low melting point metal, a semiconductor layer having its thermal expansion coefficient close to the thermal expansion coefficient of the non-silicon substrate. The silicon substrate and/or the non-silicon substrate may have a silicon dioxide layer formed thereon such that the silicon dioxide layer is adjacent to the stress-relief layer.