The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Jan. 08, 1993
George Wong, Singapore, SG;
Chartered Semiconductor Manufacturing Pte, Ltd., Singapore, SG;
Abstract
A new method of metallization of an integrated circuit is described. Semiconductor device structures are fabricated in and on a semiconductor substrate. At least one contact opening to the semiconductor substrate and at least one lithography alignment cross mark opening structure are formed. A barrier layer is preferably sputtered within the contact openings and over the semiconductor device structures. A cold aluminum seed layer is sputtered over all surfaces of the contact openings. Next, a hot aluminum flow layer is provided to obtain the desired step coverage of the contact openings. A second cold aluminum layer is then sputtered onto the hot aluminum layer to define the edges of the wide lithography alignment marks while maintaining good contact opening coverage.