The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Dec. 23, 1991
Applicant:
Inventors:
Tsuyoshi Murai, Tokyo, JP;
Shigeaki Nakamura, Tokyo, JP;
Toshinori Konaka, Tokyo, JP;
Shigeru Mizuno, Tokyo, JP;
Assignee:
M. Setek Co., Ltd., Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
437165 ; 437950 ; 437 16 ;
Abstract
A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer is disposed between a pair of opposite electrodes provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current is applied between the electrodes to induce plasma, and impurity ions are implanted into the surface of the semiconductor wafer to form a very shallow impurity diffusion layer.