The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Mar. 26, 1992
Shuichi Kameyama, Itami, JP;
Genshu Fuse, Toyonaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An improved method for fabrication of a super-high density semiconductor device wherein ion implantation is used to eliminate defects or inhibit the occurrence of growth of defects in the semiconductor device. Ions of high concentration are implanted into a monocrystal semiconductor region in which principal elements such as bipolar element and MOS element are formed, by using a mask pattern covering the semiconductor region and at a largely inclined implantation angle equal to or of more than 20 degrees. This provides for formation of amorphous regions 170A, 170B extending sufficiently into areas beneath the ends of the mask. The amorphous regions are recrystallized by heat treatment, thereby inhibiting the growth of a corner defect known as 'voids 21' which has often occurred at edges of amorphous regions 170A, 170B in the conventional method. Thus, a device which is less liable to electrical leaks is provided.