The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1993
Filed:
Oct. 31, 1991
Daniel A Seligson, Palo Alto, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method of forming a patterned resist layer on a semiconductor substrate is described. The substrate is coated with a resist layer and placed on a substrate stage in a lithographic printer. The lithographic printer includes a pulsed radiation source that emits a radiation pulse lasting a pulse time and has a recovery time between two consecutive radiation pulses. The printer has a reticle disposed between the radiation source and the resist layer. The substrate is aligned to the reticle. A stepping field of the resist layer is patterned using a plurality of radiation pulses during multiple passes of the reticle over the stepping field. The substrate moves relative to the reticle at a predetermined velocity during each of the radiation pulses. The substrate motion relative to the reticle is configured so that the radiation source emits a radiation pulse when the center of the reticle is over about the center of the stepping field. A substantially patterned resist layer is formed faster and with less misalignment variance compared to the prior art.