The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 1993

Filed:

Oct. 27, 1992
Applicant:
Inventors:

Klaus D Beyer, Poughkeepsie, NY (US);

Mark A Jaso, Yorktown Heights, NY (US);

Subramanian S Iyer, Yorktown Heights, NY (US);

Scott R Stiffler, Brooklyn, NY (US);

James D Warnock, Mohegan Lake, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 62 ; 156636 ; 156649 ;
Abstract

A method comprising the steps of: providing a substrate including an insulator material having a generally planar surface; forming a plurality of mesas of a semiconductor material on the substrate surface, the plurality of mesas spaced by channels extending to the substrate surface, the plurality of mesas including device mesas and dummy mesas; forming a polish-stop structure of at least one selected material over the substrate surface in the channels; polishing the plurality of mesas and stopping on the polish-stop structure whereby the plurality of mesas have the same thickness as the polish-stop structure; and replacing the dummy mesas with an insulator material whereby to electrically isolate the device mesas.


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