The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1993
Filed:
Dec. 12, 1991
Vladimir Rumennik, Los Altos, CA (US);
Robert W Busse, Mountain View, CA (US);
Power Integrations, Inc., Mountain View, CA (US);
Abstract
A field effect transistor (FET), according to the present invention, comprises a source and drain pair of electrodes having non-uniform charge distributions between them, such as results from small radius tips, and has a gate and channel structure that exists only between points of the source and drain pair that have the less intense charge distributions, e.g., areas not involving any small radius tips. The gate and channel structure is such that, given the non-uniform charge distributions between the source and drain pair of electrodes, the electric field is reduced around the tip by eliminating the n-well junction near the source-drain fingertips.