The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 1993

Filed:

Jul. 23, 1992
Applicant:
Inventors:

Masayuki Iwamoto, Itami, JP;

Koji Minami, Higashiosaka, JP;

Toshihiko Yamaoki, Osaka, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427578 ; 427563 ;
Abstract

An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.


Find Patent Forward Citations

Iwamoto, Masayuki. (1993). Amorphous silicon film, its production and photo semiconductor device (U.S. Patent No. 5258207). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5258207

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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