The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1993
Filed:
Jun. 19, 1992
Hiroyuki Nagasawa, Akishima, JP;
Yohichi Yamaguchi, Higashimurayama, JP;
Hoya Corporation, Tokyo, JP;
Abstract
In a method for forming a silicon carbide film by means of a hot wall type CVD apparatus, which comprises placing a substrate S in a reaction tube 1, reducing the pressure in the reaction tube 1 with an exhaust pump 4 while heating the reaction tube 1 with a heater 2, and introducing a plurality of gases into the reaction tube 1 through at least one gas-introducing tube, the silicon carbide film is formed on the substrate S from at least an acetylene gas and a dichlorosilane gas as a plurality of the above gases by alternately repeating the following procedures (A) and (B),
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile