The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1993
Filed:
Sep. 12, 1991
Wonder D Wang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Abstract
A method for analyzing ultratrace amounts of impurities in thin films present on semiconductor wafers without destroying the semiconductor wafer is described. The wafer having thin films to be analyzed is positioned into a testing device or fixture having at least one fluid reservoir. The testing device is tightened and sealed to the wafer so that the fluid reservoir is open to the thin films on the wafer, but otherwise sealed to the ambient. A reagent fluid is provided in the reservoir which dissolves the thin films on the wafer and allowing sufficient time for the fluid to dissolve the thin films. A diluent is added to the reservoir and the fluids are mixed. The mixed fluids are sampled and analyzed to determine the chemical nature of the thin films on the wafer. Samples are removed from the test fluid reservoirs to be tested as in an ion chromatograph, after the quantitative test, the wafer can be tested for weight difference and thin film edge step height by precision balance and alpha step which can be correlated.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile