The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 1993

Filed:

Jan. 08, 1992
Applicant:
Inventors:

James M Harper, Yorktown Heights, NY (US);

Karen L Holloway, Mount Kisco, NY (US);

Thomas Y Kwok, Westwood, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257774 ; 257741 ; 257762 ;
Abstract

A method for providing vias, lines and other recesses in VLSI interconnection structures with copper alloys to create a thin layer of an oxide of an alloying element on the surface of the deposited alloy and on portions of the alloy which are in contact with an oxygen containing dielectric is disclosed. The present invention is also directed to VLSI interconnection structures which utilize this copper alloy and thin oxide layer in their vias, lines and other recesses. The oxide layer eliminates the need for diffusion barrier and/or adhesion layers and provides corrosion resistance for the deposited copper alloy. VLSI devices utilizing this copper alloy in the vias, lines and other recesses interconnecting semiconductor regions, devices and conductive layers on the VLSI device are significantly improved.


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