The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1993
Filed:
Apr. 02, 1991
Applicant:
Inventors:
Naoto Matsuo, Ibaragi, JP;
Shozo Okada, Kobe, JP;
Susumu Matsumoto, Hirakata, JP;
Yoshiro Nakata, Ikoma, JP;
Toshiki Yabu, Hirakata, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257309 ; 257307 ;
Abstract
A new semiconductor memory device for performing a read/write of information of randomly accessed address includes a plurality of memory cells put in parallel arrays. Each memory cell includes a switching transistor region and a capacitor region. The capacitor regions of the two adjacent memory cells are formed in a common region over the switching transistor region of the two adjacent memory cells. The charge storage electrode of the capacitor region has the shape of a loop. The charge storage electrodes are formed by using self-alignment.