Polysilphenylenesiloxane, production process thereof, and resist

Abstract

Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.