The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1993
Filed:
Feb. 11, 1991
Junichi Miyamoto, Yokohama, JP;
Nobuaki Ohtsuka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor integrated circuit comprises a first MOS transistor, a capacitor element, a second MOS transistor, and a node. One current path of the first MOS transistor is connected to a first power source, and the gate and the other current path thereof are connected together. The capacitor element is connected between a second power source and the other current path of the first MOS transistor. The second MOS transistor is of the same conductivity type as the first MOS transistor. One current path of the second MOS transistor is connected to the first power source, and the gate thereof is connected to the gate of the first MOS transistor. The node is connected to the other current path of the second MOS transistor. The node is pre-charged at a predetermined potential level by a current flowing from the other current path of the second MOS transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile