Method of producing a bonded wafer

Abstract

This invention provides a bonded wafer of the n/n.sup.+ or p/p.sup.+ step junction or the SOI configuration possessing an outstanding getter effect by bonding two wafers thereby forming a n/n.sup.+ or p/p.sup.+ stage junction or a SOI configuration and, prior to the bonding, incorporating in one of the wafer surfaces an oxidation-induced stacking fault capable of producing a gettering effect. When a semiconductor device is produced by forming necessary components on the second semiconductor wafer surface side of the bonded wafer of this invention, therefore, the leak current across the pn junction of the semiconductor device is decreased, the life time of the carrier is improved, and the yield of the semiconductor device is notably enhanced without reference to the discrimination between the MOS type and the bipolar type.