The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1993
Filed:
Oct. 18, 1990
Applicant:
Inventors:
Abraham F Yee, Santa Clara, CA (US);
Roger T Szeto, San Jose, CA (US);
Alex Hui, Palo Alto, CA (US);
Assignee:
LSI Logic Corporation, Milpitas, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257394 ; 257372 ; 257644 ; 257650 ;
Abstract
A radiation hardened MOSFET is fabricated by forming a dielectric layer of boro-phosphosilicate glass (BPSG) over the field oxide layer of the MOSFET. The BPSG covers only a small part of the gate electrode of the MOSFET. The gate electrode of the MOSFET is formed from two layers of polycrystalline silicon so as to prevent contamination of the gate oxide by the BPSG dopants.
Yee, Abraham. (1993). Radiation hardened field dielectric utilizing bpsg (U.S. Patent No. 5235202). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5235202
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile