The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1993
Filed:
Dec. 10, 1992
Applicant:
Inventors:
Klaus D Beyer, Poughkeepsie, NY (US);
Louis L Hsu, Fishkill, NY (US);
Victor J Silvestri, Hopewell Junction, NY (US);
Andrie S Yapsir, Pleasane Valley, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156630 ; 437 62 ; 437225 ; 437974 ; 148D / ; 148D / ; 156633 ; 156643 ;
Abstract
A method of forming a thin silicon SOI layer by wafer bonding, the thin silicon SOI layer being substantially free of defects upon which semiconductor structures can be subsequently formed, is disclosed. The method comprises the steps of:
Beyer, Klaus. (1993). Method of producing a thin silicon-on-insulator layer (U.S. Patent No. 5234535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5234535
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile