The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1993
Filed:
Mar. 05, 1992
Applicant:
Inventor:
Takayuki Ohba, Yokohama, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437192 ; 437245 ; 437246 ; 437946 ; 148D / ;
Abstract
A method of forming metal contact wiring layers in semiconductor devices by cleaning the surface of an exposed substrate of a contact hole formed to the SiO.sub.2 film on a semiconductor substrate with the reducing effect of N.sub.2 H.sub.4 gas, thereafter forming a TiN barrier layer by the CVD method using the mixed gas of N.sub.2 H.sub.4 and TiCl.sub.4 while the surface is not exposed to the air, then forming a tungsten contact layer thereon by the CVD method using the mixed gas of N.sub.2 H.sub.4 and WF.sub.6, or forming the TiN layer by the CVD method on the tungsten contact layer formed by the CVD method on the substrate.