The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1993
Filed:
Dec. 05, 1991
Applicant:
Inventors:
Shao-Fu S Chu, Poughkeepsie, NY (US);
Kyong-Min Kim, Hopewell Junction, NY (US);
Shaw-Ning Mei, Wappingers Falls, NY (US);
Mary J Saccamango, Carmel, NY (US);
Donald R Vigliotti, Yorktown Heights, NY (US);
Robert J von Gutfeld, New York, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437173 ; 437 25 ; 437 26 ; 437174 ; 437247 ; 437248 ; 148D / ;
Abstract
An inexpensive and reliable technique for forming connections to a substrate or buried layer of a semiconductor structure employs a laser to melt a small, selected region of a lightly doped layer and a highly doped underlying layer. Extremely rapid diffusion of impurities and mixing of materials within the liquid phase of the melt quickly creates a uniformly doped conductive region when the melt is allowed to recrystallize.