The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1993
Filed:
Oct. 23, 1991
Klaus D Beyer, Poughkeepsie, NY (US);
San-Mei Ku, Poughkeepsie, NY (US);
Victor J Silvestri, Hopewell Junction, NY (US);
Andrie S Yapsir, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for isolating areas of silicon from a substrate 50 includes the steps of: providing a buried N+ region 52 in the substrate; forming an intrinsic epitaxial layer 12 onto the N+ region; etching trenches 18, 20 through the intrinsic epitaxial layer to thereby form a desired isolation region 16 of intrinsic epitaxial material; laterally etching a cavity 22 underneath the desired isolation region; and, forming an insulation layer 24 of insulation material along the bottom of the desired isolation region exposed by the former etching steps.