The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1993
Filed:
Dec. 12, 1990
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
An electron supply layer, a quantum well layer, a first barrier layer, a quantum well layer and a second barrier layer are formed in that order on a GaAs substrate to obtain a device, and source, drain and gate electrodes are provided on the surface of this device. In the above described quantum well layers, the lowest sub-band energies of respective carriers largely differ from each other. Accordingly, one of the above quantum well layers serves as a high-speed channel, and the other serves as a low-speed channel. The change in current value with the application of a gate bias depends only on the speed at which electrons move from the high-speed channel to the low-speed channel. Consequently, a velocity-modulation transistor can be constructed which operates at substantially high speed.