The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1993
Filed:
Jan. 10, 1992
Applicant:
Inventors:
Norio Homma, Tokyo, JP;
Hiromi Takahashi, Tokyo, JP;
Shinji Kawamoto, Tokyo, JP;
Hideyuki Kondo, Tokyo, JP;
Tadataka Morishita, Tokyo, JP;
Assignees:
International Superconductivity Technology Center, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
The Hokkaido Electric Power Company Inc., Hokkaido, JP;
The Chugoku Electric Power Co., Inc., Hiroshima, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ;
U.S. Cl.
CPC ...
505-1 ; 20419224 ; 505731 ;
Abstract
A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is a frequency which is higher than 13.56 MHz and which provides a negative target self-bias voltage permitting of film formation.