The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1993
Filed:
Oct. 15, 1991
Applicant:
Inventor:
Harunori Ushikawa, Kofu, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437233 ; 437225 ; 437228 ; 118620 ; 118715 ; 427587 ; 427588 ;
Abstract
Phosphor-doped silicon films are simultaneously formed on semiconductor wafers, respectively. The semiconductor wafers are contained in a reaction tube whose interior temperature is controlled to 500.degree. C. Si.sub.2 H.sub.6 and PH.sub.3 are introduced into the reaction tube. PH.sub.3 is preheated to 400.degree. C. in a gas activating unit before being introduced into the reaction tube. By virtue of the preheating, the thermal decomposition of PH.sub.3 carried out in the reaction tube is accelerated.