The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1993
Filed:
Jul. 10, 1992
Alexander H Owens, Santa Clara, CA (US);
Mike Lyu, Saratoga, CA (US);
Shahin Toutounchi, Pleasanton, CA (US);
Abraham Yee, Santa Clara, CA (US);
LSI Logic, Milpitas, CA (US);
Abstract
A radiation hardened NMOS transistor structure suited for application to radiation hardened CMOS devices, and the method for manufacturing it is disclosed. The new transistor structure is characterized by 'P' doped guard bands running along and immediately underlying the two bird's beak regions perpendicular to the gate. The transistor and the CMOS structure incorporating it exhibit speed and size comparable to those of conventional non-rad-hard CMOS structure, relatively simple manufacturing, and excellent total-dose radiation hardness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile