The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1993
Filed:
Apr. 03, 1992
Laszlo Fabry, Emmerting, DE;
Manfred Grundner, Burghausen, DE;
Peter John, Burghausen, DE;
Wolfgang Feichtner, Ach, AT;
Dieter Graefg, Burghausen, DE;
Rosemarie Winklharrer, Marktl, DE;
Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH, Burghausen, DE;
Abstract
Silicon wafers are first subjected to an oxidative treatment and subsequey to exposure to organosilicon compounds which contain at least one radical in the molecule which is hydrolyzably bound to the silicon and at least one radical in the molecule having hydrophilic properties. Depending on the compound selected, more or less strongly hydrophilic or hydrophobic properties of the silicon surface can consequently be established under mild conditions. The wafers treated in such a manner have a high storage stability and retain their surface nature even under difficult climatic circumstances. The surface nature present after the oxidative treatment can then be restored particularly easily by hydrolysis.