The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1993
Filed:
Apr. 10, 1991
Susumu Matsumoto, Hirakata, JP;
Toshiki Yabu, Hirakata, JP;
Yoshiro Nakata, Ikoma, JP;
Naoto Matsuo, Ibaraki, JP;
Shozo Okada, Kobe, JP;
Hiroyuki Sakai, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Disclosed is a semiconductor integrating circuit having stacked capacitor cells. Each of the cells includes an electric charge storage electrode for storing an electric charge, and a capacitor insulation film and opposite plate electrode integrated thereon. The electric charge storage electrode consists essentially of a bottom and a part in at least double frame-like portion or at least one column-like portion and at least one frame-like portion surrounding the column-like portion rising upwardly from the bottom surface. The capacitor deposited film consists of a dielectric material film deposited on all of the bottom plane and all surfaces of the charge storage electrode, and constructs a capacitor in cooperation with the opposite plate electrode. The described method for making a stacked capacitor cell can make it possible to form self-aligned capacitors by repeating a deposition of an oxide film and a conductive film and an anisotropic etching.