The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 1993

Filed:

Jun. 20, 1991
Applicant:
Inventor:

Toshiro Nakanishi, Kamakura, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 24 ; 437 37 ;
Abstract

A method for fabricating a semiconductor device comprises the steps of providing an oxide film containing silicon and oxygen on a substrate, introducing species containing oxygen into the oxide film by an ion implantation process, and providing an electrode on the oxide film.


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