The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
May. 07, 1992
Darrell M Erb, Los Altos, CA (US);
Rajat Rakkhit, Milpitas, CA (US);
Farrokh Omid-Zohoor, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An improved process is provided for fabricating short channel complementary metal oxide semiconductor devices. The devices comprise source and drain regions separated by gate regions. The process comprises forming a shallow channel doping region (12') beneath the surface of a semiconductor (10) and forming source-drain regions (20') of opposite conductivity type (formerly known as lightly doped drain structures) on either side of the shallow doping region. A gate oxide (16) is formed on the surface of the semiconductor above the shallow channel doping region and a gate electrode (18) is formed to the gate oxide subsequent to the formation of the shallow channel doping region. The process permits spacing of the channel doping from the source-drain doping with self-alignment. Further, the doping of the source-drain regions is not constrained to the values of the lightly-doped structures of the prior art.