The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1993
Filed:
Mar. 06, 1992
Kabushiki Kaisha Tobisha, Kawasaki, JP;
Abstract
A manufacturing method of this invention improves nonuniformity in film thickness of a circuit element formation region produced due to a poor flatness of a semiconductor substrate in the manufacture of a semiconductor substrate having a dielectric isolating structure. Mirror-polished surfaces of first and second semiconductor substrates are opposed and bonded to each other so as to sandwich a dielectric having a predetermined thickness, and the first semiconductor substrate is ground from the surface opposite to the adhesion surface to have a predetermined thickness with reference to the dielectric. An impurity is doped in the first semiconductor substrate to form a high-concentration impurity layer having an impurity concentration corresponding to a predetermined low-concentration impurity layer having a predetermined thickness thereon, thereby constituting a circuit element region. This invention is a method of manufacturing a semiconductor substrate, which improves film thickness precision of each circuit element formation layer for forming a circuit element.