The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1993
Filed:
Feb. 14, 1992
Hitoshi Tsuji, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer on a semiconductor substrate, forming a resist film sensitive to electron beams on the first insulating layer, applying electron beams onto a predetermined region of the resist film, removing unnecessary portions of the resist film by using a developer, thereby forming a remaining pattern resist film, forming a second insulating layer on the entire region of the first insulating layer and the remaining pattern resist film, simultaneously removing the remaining pattern resist film and the second insulating layer which is formed thereon, thereby forming an opening of a predetermined pattern on the second insulating layer, and etching the first insulating layer through the opening, using the second insulation layer as a mask, thereby causing a predetermined region of the semiconductor substrate to be exposed.