The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1993
Filed:
May. 26, 1992
Khaled A El-Ayat, Cupertino, CA (US);
Jia-Hwang Chang, Cupertino, CA (US);
Actel Corporation, Sunnyvale, CA (US);
Abstract
Apparatus for performing high voltage testing of high-voltage transistors in the programming paths of a user-configurable integrated circuit including a plurality of conductors which may be connected to one another and to functional circuit blocks by programming user-programmable antifuse elements connected thereto to form electronic circuits, prior to formation of the electronic circuits by a user, including circuitry, responsive to signals provided to the integrated circuit from an external source, for temporarily connecting together a first group of the conductors to form a circuit path, the circuit path including the source and drain of at least one of the high-voltage transistors during a selected time period; circuitry for driving the circuit path and the gate of the at least one high-voltage transistor to a first voltage potential during the selected time period; circuitry for driving the bulk semiconductor region in the integrated circuit containing the source and drain of the at least one high-voltage transistor to a second voltage potential different from the first voltage potential during the selected time period, wherein the difference between the first voltage potential and the second voltage potential is more than the voltage necessary to cause degradation of faulty high-voltage transistors but less than the voltage necessary to cause degradation of properly functioning high-voltage transistors; and circuitry for measuring the current flowing between the first and second voltage potentials during the selected time period.