The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 1993

Filed:

Sep. 20, 1991
Applicant:
Inventors:

Yoshiharu Takahashi, Itami, JP;

Tetsuya Hirose, Itami, JP;

Hideyuki Ichiyama, Itami, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L / ; G01L / ;
U.S. Cl.
CPC ...
73727 ; 296711 ; 73706 ; 73721 ; 128675 ; 338-4 ;
Abstract

A semiconductor pressure sensor is manufactured by integrally encapsulating a semiconductor pressure, sensor chip, a pedestal, leads, wires and a die pad in an outer package except for the surface of a diaphragm of the semiconductor pressure sensor chip and the reverse side of the die pad. The ratio of the thickness of the pedestal to the thickness of the semiconductor pressure sensor chip is 7.5 or less, while the ratio of the diameter of an opening formed in the outer package at the surface of the diaphragm and the diameter of the diaphragm is 1 or more. The thermal stress generated in the semiconductor pressure sensor chip can freely be reduced to a desired value, and a semiconductor pressure sensor exhibiting a desired accuracy can therefore be obtained. Furthermore, since the semiconductor pressure sensor can be manufactured by an ordinary IC manufacturing process, a semiconductor pressure sensor with reduced cost and having high quality can be produced.


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