The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1993
Filed:
May. 08, 1992
Applicant:
Inventors:
Peter K Charvat, Portland, OR (US);
Chris Kardas, Tigard, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437245 ; 156643 ; 156646 ; 148D / ;
Abstract
An anisotropic reactive ion etching of an aluminum metal film of a semiconductor device. The device is placed in a reactive ion etcher using a CF.sub.4, Cl.sub.2 and BCl.sub.3 gas mixture to anisotropically etch the aluminum metal film layer wherein the gas mixture has a ratio of CF.sub.4 :Cl.sub.2 such that the aluminum etch rate increases as the amount of CF.sub.4 relative to Cl.sub.2 increases.