The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 1993

Filed:

Mar. 16, 1992
Applicant:
Inventors:

Arnold Reisman, Raleigh, NC (US);

Dorota Temple, Raleigh, NC (US);

Assignee:

MCNC, Research Triangle Park, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C23F / ; C23C / ;
U.S. Cl.
CPC ...
156646 ; 118719 ; 118721 ; 156656 ; 156657 ; 156662 ; 156345 ; 427252 ; 4272551 ; 427282 ; 437228 ; 437234 ; 437245 ;
Abstract

A novel process for the selective deposition of solid-phase materials is disclosed, which process requires only the modulation of a single auxiliary gas within a suitable reactor assembly. According to the disclosed method, selective area deposition can be obtained on any desired microelectronic substrate by the creation of a vapor-phase chemical equilibrium system capable of deposition and etching the material to be deposited. The vapor-phase system is designed around a single reversible reaction wherein the material to be deposited equilibrates between that solid phase and its vapor-phase constituent species. By modulating an auxiliary gas flow into the reactor assembly, alternating deposition and etching processes can be obtained to yield an overall process which results in net overall selective and uniform deposition.


Find Patent Forward Citations

Loading…