The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1993
Filed:
Nov. 17, 1989
Osamu Ito, Gaithersburg, MD (US);
Tadamichi Asai, Ibaraki, JP;
Toshio Ogawa, Katsuta, JP;
Mitsuru Hasegawa, Hitachi, JP;
Akira Ikegami, Yokohama, JP;
Yoshishige Endoh, Tsuchiura, JP;
Michio Ootani, Chiba, JP;
Katsuo Ebisawa, Ibaraki, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi Chemical Company, Ltd., Tokyo, JP;
Abstract
In a semiconductor device such as hybrid IC, thermal heads, etc., a thick film resistor of the semiconductor device contains a boride particle of a metal dispersed in a glass matrix, the particle having a particles size of 0.005 to 0.1 .mu.m. Generation of a thermal stress can be suppressed and the electroconductive particles themselves form isotropic electroconductive passages by such dispersion, and the semiconductor devices can have a distinguished electroconductivity. Preferable boride of a metal is LaB.sub.6, which gives distinguished resistor characteristics.