The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 1993

Filed:

Apr. 23, 1990
Applicant:
Inventors:

Mark L Burgener, San Diego, CA (US);

Graham A Garcia, San Diego, CA (US);

Ronald E Reedy, San Diego, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324663 ; 3241 / ; 324719 ;
Abstract

A method and apparatus for characterizing the quality of an electrically thin semiconductor film and its interfaces with adjacent materials by employing a capacitor and a topside electrical contact on the same side of the electrically thin semiconductor film to thereby permit the taking of capacitance-voltage (C-V) measurements. A computer controlled C-V measuring system is operatively coupled to the contact and capacitor to modulate the potential on the capacitor. Variation of the voltage applied to the capacitor enables modulation of the potential applied to the film to thereby vary the conductivity of the film between the capacitor gate node and the topside contact.


Find Patent Forward Citations

Loading…