The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1993
Filed:
Nov. 21, 1991
Applicant:
Inventor:
Nobuhiko Mutoh, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
257216 ; 377 60 ; 257239 ;
Abstract
A charge transfer device has an output structure formed, in a semiconductor substrate of a first conductivity type, of a base region of a second conductivity type, an output region of the first conductivity type formed in the base region, a reset-drain region of a second conductivity type formed separately from the base region and held at a constant potential, and a reset gate electrode formed on the semiconductor substrate between the base and reset-drain regions via an insulator film to receive a reset pulse. The base region has a portion under the output region which is designed to allow a complete depletion throughout its thickness.