The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1993
Filed:
May. 07, 1991
Hideki Gomi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device including a first wiring layer, and insulator layer formed on the first wiring layer and including a first silicon oxide film, a spin-coated insulating film formed on the first silicon oxide film and a second silicon oxide film formed on the spin-coated insulating film, a through-hole selectively formed in the insulator layer to expose a part of the first wiring layer, and a second wiring layer formed on the insulator layer and in contact with the part of the first wiring layer exposed through the through-hole, wherein the second silicon oxide film has a density lower than the density of the first silicon oxide film and allows gas from the spin-coated insulating film to go through the second silicon oxide film.