The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1993
Filed:
Jun. 05, 1990
Yoshihisa Fujii, Nara, JP;
Akira Suzuki, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Mitsuhiro Shigeta, Kyoto, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A silicon carbide semiconductor device is disclosed which includes a semiconductor substrate and a silicon carbide single-crystal layer formed above the substrate, the silicon carbide single-crystal layer having a device active region. The silicon carbide semiconductor device further includes an aluminum nitride single-crystal layer which is disposed between the silicon carbide single-crystal layer and the substrate. The aluminum nitride single-crystal layer functions as an electrically insulating layer by which the silicon carbide signale-crystal layer is isolated electrically from the substrate.