The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1993
Filed:
Sep. 13, 1991
Applicant:
Inventors:
Masahiko Doki, Sagamihara, JP;
Michiko Takei, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437160 ; 437141 ; 437225 ; 437228 ; 437950 ; 148D / ; 148D / ; 148D / ;
Abstract
A method of forming a shallow junction comprises the step of: forming a film including a hydrogen compound with one element selected from the group of boron, phosphorus arsenic to a thickness of several atom layers to 1000 .ANG. on a silicon substrate and annealing the film, whereby an impurity region having a depth of 1000 .ANG. or less and an impurity concentration of 10.sup.18 to 10.sup.21 cm.sup.-3 is formed in the surface layer of the silicon layer.