The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1993
Filed:
Aug. 09, 1990
Applicant:
Inventor:
Shingo Terakado, Tsukuba, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156662 ; 156345 ;
Abstract
A dry etching method for etching a substrate such as semiconductors. A vacuum ultraviolet radiation or soft X-rays is used as a photon beam source for generating a reaction of dry etching, and also an etching gas in introduced into a reaction chamber after being activated by a microwave radiation, whereby a reaction of the etching gas with a substrate takes place at a region of the processing material to which the electromagnetic wave is irradiated, and a dry etching is accomplished at the region etched by the reaction of the etching gas.