The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 1993

Filed:

Mar. 29, 1990
Applicant:
Inventors:

Kenji Harafuji, Moriguchi, JP;

Akio Misaka, Hirakata, JP;

Hiromitsu Hamaguchi, Moriguchi, JP;

Kenji Kawakita, Neyagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F / ; H01J / ;
U.S. Cl.
CPC ...
364490 ; 364489 ; 364488 ; 2504923 ;
Abstract

A method of correcting design patterns in cells, having hierarchial structure and corresponding to exposure patterns, for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light. A first frame zone is provided having a predetermined width inside the boundary of each cell, and a second frame zone is provided having a predetermined width inside the first frame zone. Proximity effect correction operations are performed such that a pattern in the second frame zone and a pattern inside the second frame zone are used as a pattern to be corrected and a pattern in the first frame zone is used as a reference pattern when correcting pattern data in each cell for proximity effects and a pattern in the first frame zone in each cell is added to the pattern to be corrected and a pattern in the second frame zone in each cell is used as a reference pattern when correcting pattern data in a cell directly overlying each cell for proximity effect.


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