The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1993
Filed:
Jul. 09, 1990
Wolodymyr Czubatyj, Warren, MI (US);
Stanford R Ovshinsky, Bloomfield Hills, MI (US);
Guy C Wicker, Southfield, MI (US);
David Beglau, Dearborn, MI (US);
Ronald Himmler, Sterling Heights, MI (US);
David Jablonski, Drayton Plains, MI (US);
Subhendu Guha, Troy, MI (US);
Energy Conversion Devices, Inc., Troy, MI (US);
Abstract
A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.