The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1993
Filed:
Jul. 19, 1991
Patrick J Klersy, Madison Heights, MI (US);
David C Jablonski, Waterford, MI (US);
Stanford R Ovshinsky, Bloomfield Hills, MI (US);
Energy Conversion Devices, Inc., Troy, MI (US);
Abstract
Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.