The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1993
Filed:
Sep. 30, 1991
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
A method for manufacturing a static induction type semiconductor device is to form gate zones on a surface side of a semiconductor substrate, to cover the surface including the gate zones with an oxide film, to form through the oxide film apertures for providing cathode zones in the substrate, the apertures respectively overlapping partly each gate zone, and to form the cathode zones with thermal diffusion of an impurity carried out through the apertures, the cathode zones thus partly overlapping the gate zones. Concentration of the impurity as well as the depth of the diffusion at thus made impurity diffusion zones can be thereby stabilized, and eventually electric characteristics of enhancement type, static induction type semiconductor device can be sufficiently made stable.