The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1992
Filed:
May. 08, 1991
Applicant:
Inventors:
Michihiro Sano, Odawara, JP;
Yasuo Okuno, Yokohama, JP;
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156621 ; 148D / ; 156603 ; 156622 ; 156624 ; 156D / ; 156D / ; 156D / ; 437102 ;
Abstract
A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an underlie substrate placed at a low temperature portion in the solution. When the temperature of the vapor pressure treatment is 1050.degree. C., excellent photoluminescence peaks are obtained when the Se pressure is 6 to 9 atoms.
Sano, Michihiro. (1992). Crystal growth of group ii-vi compound semiconductor (U.S. Patent No. 5174854). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5174854
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile