The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Jul. 20, 1989
Ludwig Leipold, Munich, DE;
Jenoe Tihanyi, Munich, DE;
Roland Weber, Munich, DE;
Rainald Sander, Munich, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
The gate-source capacitance of a power MOSFET (1) can be protected against positive and negative excess voltages by two integrated Zener diodes (3, 4) the anodes of which are coupled to each other and the cathodes of which are respectively coupled to the gate and source terminals of the power MOSFET. However, when a control voltage is applied, the parasitic bipolar transistor associated with one of the Zener diodes is switched on and prevents the MOSFET from completely switching on. The parasitic bipolar transistor is rendered harmless by the fact that the anode terminal is coupled to a source terminal (S) MOSFET (1) when a gate-source voltage is applied.