The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1992
Filed:
Sep. 23, 1991
Applicant:
Inventors:
Johannes F Westendorp, Amsterdam, NL;
Hans W Piekaar, Utrecht, NL;
Assignee:
ASM International N.V., Bilthoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C / ;
U.S. Cl.
CPC ...
156646 ; 156635 ; 252 793 ; 134-3 ; 134 31 ;
Abstract
A process for halide etching of a semi-conductor substrate in the presence of water. Etching is realized in a reaction vessel. The process steps comprise filling of the reaction vessel with a first gas to a first pressure and subsequently filling the reaction vessel with a second gas to a second pressure after which the substrate is left in the reaction vessel for several minutes to obtain the etching required. One of the gases is HF and the other of the gases is water vapor. The etching is conducted at sub-atmospheric pressure, preferably below 50 Torr.
Published as:
WO9106975A1; EP0500670A1; US5167761A; JPH05504024A; EP0500670B1; ATE109924T1; DE69011529D1; DE69011529T2; KR0161674B1; JP2941943B2;