The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1992
Filed:
Jan. 22, 1991
Fu-Chieh Hsu, Saratoga, CA (US);
Pei-Lin Pai, Cupertino, CA (US);
Myson Technology, Inc., Cupertino, CA (US);
Knights Technology, Inc., Santa Clara, CA (US);
Abstract
An integrated circuit of the present invention comprises antifuse elements which have been fabricated by depositing at under 500.degree. C. an antifuse layer approximately 30 nanometers to 400 nanometers between layers of titanium (Ti), said antifuse layer comprising a stoichiometric or off-stoichiometric amorphous silicon-based dielectric layer, such that a heating of the said antifuse layer in excess of 500.degree. C. by electrical or energy beam means will cause a chemical reduction reaction between the titanium and silicon-dioxide layers that yields more Ti.sub.5 Si.sub.3, TiSi, and/or TiSi.sub.2 than is yielded TiO, Ti.sub.2 O.sub.3, Ti.sub.3 O.sub.5, and/or TiO.sub.2, and such that there results a conductive compound between said titanium layers which constitutes a short circuit.